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AP9997GK-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package.

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Other Datasheets by Advanced Power Electronics Corp

Part Number Description
AP9997GK-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GH-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GH-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9997GJ-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9997GK-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product SOT-223 D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S D G 100V 120mΩ 3.2A ID Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 100 +20 3.2 2.6 20 2.