Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A
DC Current Gain-
: hFE= 20(Min)@IC=-10A
Excellent Safe Operating Area
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for general purpose power
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isc Silicon PNP Power Transistors
DESCRIPTION ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-10A ·DC Current Gain-
: hFE= 20(Min)@IC=-10A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-25
A
ICM
Collector Current-Peak
-50
A
IB
Base Current-Continuous
-7.
BD369 Datasheet
