BD330 - Silicon PNP Power Transistor

Inchange Semiconductor

General Description

DC Current Gain- : hFE= 85~375(Min)@ IC= -0.5A Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -20V(Min) Complement to type BD329 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Especially for battery equipped applications.

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BD330 silicon pnp power transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD330
Manufacturer	Inchange Semiconductor
File Size	210.60 KB
Description	Silicon PNP Power Transistor
Datasheet	BD330 Datasheet

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isc Silicon PNP Power Transistor BD330 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= -0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -20V(Min) ·Complement to type BD329 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications.