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BD433 - Silicon NPN Power Transistors

General Description

Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) Complement to type BD434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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Full PDF Text Transcription for BD433 (Reference)

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 22V(Min) ·Complement to type BD434 ·Minimum Lot-to-Lot variations for ro...

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V(Min) ·Complement to type BD434 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 22 V VCES Collector-Emitter Voltage 22 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BD433 isc website：www.iscse

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