Fairchild Semiconductor BD433
NPN Epitaxial Silicon Transistor
| Part No. | BD433 |
|---|---|
| Datasheet | BD433 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Medium Power Linear and SwitchingAPPLICATIONS
● Complement to BD434, BD436 and BD438 respectively July 2011 Ordering Information Part Number Marking BD433S BD433 BD435S BD435 BD435STU BD435 BD437S BD437 * The suffix "S" of FSID denotes TO126 package. Package TO-126 TO-126 TO-126 TO-126 1 TO-126 1. Emitter 2.Collector 3.Base Packing Method BULK BULK RAIL BULK RemarksABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise noted Symbol Parameter VCBO VCES Collector-Base Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Value 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 to 150 Units V V V V V V V V V V A A A W °C °C © 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev. B0 1 BD433/435/437 — NPN Epitaxial...
