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BD433 - NPN Epitaxial Silicon Transistor

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
BD434 PNP Epitaxial Silicon Transistor
BD435 NPN Epitaxial Silicon Transistor
BD436 PNP Epitaxial Silicon Transistor
BD437 NPN Epitaxial Silicon Transistor
BD438 PNP Epitaxial Silicon Transistor

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BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD433 : BD435 : BD437 VCES Collector-Emitter Voltage : BD433 : BD435 : BD437 Collector-Emitter Voltage : BD433 : BD435 : BD437 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 22 32 45 22 32 45 22 32 45 5 4 7 1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W °C °C Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev.