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BD436 - PNP Epitaxial Silicon Transistor

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
BD433 NPN Epitaxial Silicon Transistor
BD434 PNP Epitaxial Silicon Transistor
BD435 NPN Epitaxial Silicon Transistor
BD437 NPN Epitaxial Silicon Transistor
BD438 PNP Epitaxial Silicon Transistor

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BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications • Complement to BD433, BD435 and BD437 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD434 : BD436 : BD438 VCES Collector-Emitter Voltage : BD434 : BD436 : BD438 Collector-Emitter Voltage : BD434 : BD436 : BD438 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 22 - 32 - 45 - 22 - 32 - 45 - 22 - 32 - 45 -5 -4 -7 -1 36 150 - 65 ~ 150 V V V V V V V V V V A A A W °C °C Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev.