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BD436 - Silicon PNP Power Transistors

General Description

Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -32V(Min) Complement to type BD435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

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isc Silicon PNP Power Transistor BD436 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -32V(Min) ·Complement to type BD435 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -32 V VCES Collector-Emitter Voltage -32 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.