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BD435 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor BD435.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 32V(Min) ·Complement to type BD436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCES Collector-Emitter Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;

IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;

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