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BD435 - Silicon NPN Power Transistors

Download the BD435 datasheet PDF. This datasheet also covers the BD433 variant, as both devices belong to the same silicon npn power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 32V(Min) Complement to type BD436 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

applications.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD433_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor BD435 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 32V(Min) ·Complement to type BD436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCES Collector-Emitter Voltage 32 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Pulse 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 36 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.