Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min)
High DC Current Gain
: hFE= 750(Min) @IC= -3A
Low Saturation Voltage
Complement to Type BD643
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BD644. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·...
View more extracted text
: V(BR)CEO= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Saturation Voltage ·Complement to Type BD643 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICP Collector Current-Peak -12 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ
BD644 Datasheet
