BD735 Description
hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min.) ·plement to Type BD736 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications. 1 isc & iscsemi is registered trademark S isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...