BD735 transistor equivalent, silicon npn power transistor.
*Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI.
*DC Current Gain -
: hFE = 40(Min.)@ IC= 20mA
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 35V(Min.)
*Complement to Type BD736
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
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