Datasheet Details
| Part number | BD736 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.54 KB |
| Description | Silicon PNP Power Transistor |
| Download | BD736 Download (PDF) |
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| Part number | BD736 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.54 KB |
| Description | Silicon PNP Power Transistor |
| Download | BD736 Download (PDF) |
|
|
|
·DC Current Gain - : hFE = 40(Min.)@ IC= -20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -35V(Min.) ·Complement to Type BD735 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -35 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
isc Silicon PNP Power Transistor BD736.
| Part Number | Description |
|---|---|
| BD733 | Silicon NPN Power Transistor |
| BD734 | Silicon PNP Power Transistor |
| BD735 | Silicon NPN Power Transistor |
| BD737 | Silicon NPN Power Transistor |
| BD738 | Silicon PNP Power Transistor |
| BD791 | Silicon NPN Power Transistor |
| BD799 | Silicon NPN Power Transistor |