Datasheet Details
| Part number | BD737 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.09 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD737 Download (PDF) |
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|
| Part number | BD737 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.09 KB |
| Description | Silicon NPN Power Transistor |
| Download | BD737 Download (PDF) |
|
|
|
·DC Current Gain - : hFE = 40(Min.)@ IC= 20mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min.) ·Complement to Type BD738 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 7 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
isc Silicon NPN Power Transistor BD737.
| Part Number | Description |
|---|---|
| BD733 | Silicon NPN Power Transistor |
| BD734 | Silicon PNP Power Transistor |
| BD735 | Silicon NPN Power Transistor |
| BD736 | Silicon PNP Power Transistor |
| BD738 | Silicon PNP Power Transistor |
| BD791 | Silicon NPN Power Transistor |
| BD799 | Silicon NPN Power Transistor |