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BD912 - Silicon NPN Power Transistors

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Datasheet Details

Part number BD912
Manufacturer Inchange Semiconductor
File Size 212.81 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet BD912_InchangeSemiconductor.pdf

BD912 Product details

Description

DC Current Gain - : hFE = 40@ IC= -0.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Complement to Type BD911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC

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