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BDS16 - Silicon NPN Power Transistor

General Description

High Voltage: VCEV= 120V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A High Reliablity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

General puepose power.

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NCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDS16 DESCRIPTION ·High Voltage: VCEV= 120V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 4A ·High Reliablity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power linear and switching application and General puepose power.