BDS16
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BDS16 / BDS17
- High Voltage
- Hermetic TO220M (T0-257AB) Isolated Metal Package
- Ideally suited for Power Linear, Switching and general Purpose Applications
- Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO VCEO VEBO IE, IC IB PD TJ Tstg
Collector
- Base Voltage (IE = 0) Collector
- Emitter Voltage (IB = 0) Emitter
- Base Voltage (IC = 0) Emitter, Collector Current
Base Current Total Power Dissipation at TC = 25°C Junction Temperature Range
Storage Temperature Range
BDS17
120V
150V
120V
150V
5V
8A
2A
43.75W
+200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 4.0
Units °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab...
