BDS16 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Datasheet Details

Part number	BDS16
Manufacturer	TT
File Size	198.13 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	BDS16 Datasheet
Additional preview pages of the BDS16 datasheet.

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IE, IC IB PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Emitter, Collector Current Base Current Total Power Dissipation at TC = 25°C Junction Temperature Range Storage Temperature Range BDS16 BDS17 120V 150V 120V 150V 5V 8A 2A 43.75W +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 4.

Published: Jul 30, 2024 |