BDS16 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDS16
Manufacturer	TT Electronics
File Size	198.13 KB
Description	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet	BDS16 Datasheet

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Other Datasheets by TT Electronics

Part Number	Description
BDS17	SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BDS18	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS18SMD	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS19	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
BDS20	SILICON EPIBASE NPN DARLINGTON TRANSISTOR

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IE, IC IB PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Emitter, Collector Current Base Current Total Power Dissipation at TC = 25°C Junction Temperature Range Storage Temperature Range BDS16 BDS17 120V 150V 120V 150V 5V 8A 2A 43.75W +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 4.