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BDS17 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Download the BDS17 datasheet PDF. This datasheet also covers the BDS16 variant, as both devices belong to the same silicon planar epitaxial npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (BDS16-TT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BDS17
Manufacturer TT Electronics
File Size 198.13 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet download datasheet BDS17 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IE, IC IB PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Emitter, Collector Current Base Current Total Power Dissipation at TC = 25°C Junction Temperature Range Storage Temperature Range BDS16 BDS17 120V 150V 120V 150V 5V 8A 2A 43.75W +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 4.