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BDS17 - SILICON PLANAR EPITAXIAL NPN TRANSISTOR

This page provides the datasheet information for the BDS17, a member of the BDS16 SILICON PLANAR EPITAXIAL NPN TRANSISTOR family.

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Datasheet Details

Part number BDS17
Manufacturer TT
File Size 198.13 KB
Description SILICON PLANAR EPITAXIAL NPN TRANSISTOR
Datasheet download datasheet BDS17 Datasheet
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Other Datasheets by TT
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  • BDS19 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR
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SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDS16 / BDS17 • High Voltage • Hermetic TO220M (T0-257AB) Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IE, IC IB PD TJ Tstg Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Emitter, Collector Current Base Current Total Power Dissipation at TC = 25°C Junction Temperature Range Storage Temperature Range BDS16 BDS17 120V 150V 120V 150V 5V 8A 2A 43.75W +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 4.
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