BDS19 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

TT Electronics

Datasheet Details

Part number	BDS19
Manufacturer	TT Electronics
File Size	516.35 KB
Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Datasheet	BDS19 Datasheet

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS19 • High Voltage • Hermetic TO220 Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -150V VCEO Collector – Emitter Voltage -150V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -8A IB Base Current -2A PD Total Power Dissipation at TC ≤ 75°C 50W Derate Above 75°C 0.4W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 2.