BDS19 - SILICON PLANAR EPITAXIAL PNP TRANSISTOR

Datasheet Details

Part number	BDS19
Manufacturer	TT
File Size	516.35 KB
Description	SILICON PLANAR EPITAXIAL PNP TRANSISTOR
Datasheet	BDS19 Datasheet
Additional preview pages of the BDS19 datasheet.

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SILICON PLANAR EPITAXIAL PNP TRANSISTOR BDS19 • High Voltage • Hermetic TO220 Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -150V VCEO Collector – Emitter Voltage -150V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -8A IB Base Current -2A PD Total Power Dissipation at TC ≤ 75°C 50W Derate Above 75°C 0.4W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 2.

Published: Jul 30, 2024 |