TT BDS19
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
| Part No. | BDS19 |
|---|---|
| Datasheet | BDS19 Download |
| Manufacturer |  TT |
| Description | SILICON PLANAR EPITAXIAL PNP TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
● Screening Options AvailableABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -150V VCEO Collector – Emitter Voltage -150V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -8A IB Base Current -2A PD Total Power Dissipation at TC ≤ 75°C 50W Derate Above 75°C 0.4W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 2.5 Units °C/W ** This datasheet supersedes document 3346 Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coven...
