BDS19
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
- High Voltage
- Hermetic TO220 Isolated Metal Package
- Ideally suited for Power Linear, Switching and general Purpose Applications
- Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
Collector
- Base Voltage
-150V
VCEO
Collector
- Emitter Voltage
-150V
VEBO
Emitter
- Base Voltage
-5V
Continuous Collector Current
-8A
Base Current
-2A
Total Power Dissipation at TC ≤ 75°C
50W
Derate Above 75°C
0.4W/°C
Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max....
