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BDS18 - Silicon PNP Power Transistor

General Description

Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -8.0 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC<75℃ TJ Junction Temperature -2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDS18 isc website：www.iscsemi.