Download the BDT63B datasheet PDF.
This datasheet also covers the BDT63 variant, as both devices belong to the same silicon npn darlington power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
Collector Current -IC= 10A
High DC Current Gain-hFE= 1000(Min)@ IC= 3A
Complement to Type BDT62/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general purpose
amplifier applications
Full PDF Text Transcription for BDT63B (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BDT63B. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum ...
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Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperat
BDT63B Datasheet
