BDT63B Datasheet
BDT63B Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDT63/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63 V(BR)CEO Collector-Emitter Breakdown Voltage BDT63A BDT63B IC= 30mA ;IB=0 BDT63C VCE(sat)-1 Coll.
BDT63B Datasheet (Comset Semiconductors)
Comset Semiconductors
SEMICONDUCTORS BDT63-A-B-C SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 envelope. They are intended for output stages .
63C Value Unit IB Base Current 250 mA PT Power Dissipation @ Tmb < 25° 90 W TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings BDT.