Collector Current -IC= 10A
High DC Current Gain-hFE= 1000(Min)@ IC= 3A
Complement to Type BDT62/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general purpose
amplifier applications
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT63
60
VCER
Collector-Emitter Voltage
BDT63A
80
BDT63B
100
V
BDT63C
120
BDT63
60
VCEO
Collector-Emitter Voltage
BDT63A
80
BDT63B
100
V
BDT63C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
BDT63 Datasheet
