Datasheet4U Logo Datasheet4U.com

BDT63B - Silicon NPN Darlington Power Transistor

This page provides the datasheet information for the BDT63B, a member of the BDT63 Silicon NPN Darlington Power Transistor family.

Datasheet Summary

Description

Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications

📥 Download Datasheet

Datasheet preview – BDT63B

Datasheet Details

Part number BDT63B
Manufacturer Inchange Semiconductor
File Size 215.88 KB
Description Silicon NPN Darlington Power Transistor
Datasheet download datasheet BDT63B Datasheet
Additional preview pages of the BDT63B datasheet.

📁 Similar Datasheet

  • BDT63B - Silicon Darlington Power Transistor (Comset Semiconductors)
  • BDT63BF - NPN Transistor (INCHANGE)
  • BDT63 - Silicon Darlington Power Transistor (Comset Semiconductors)
  • BDT63A - Silicon Darlington Power Transistor (Comset Semiconductors)
  • BDT63AF - NPN Transistor (INCHANGE)
  • BDT63C - Silicon Darlington Power Transistor (Comset Semiconductors)
  • BDT63CF - NPN Transistor (INCHANGE)
  • BDT63F - NPN Transistor (INCHANGE)
  • BDT60 - PNP Transistor (Power Innovations Limited)
  • BDT60 - PNP SILICON POWER DARLINGTONS (New Jersey Semi-Conductor)
Other Datasheets by Inchange Semiconductor
  • BDT63 - Silicon NPN Darlington Power Transistor
  • BDT63A - Silicon NPN Darlington Power Transistor
  • BDT63C - Silicon NPN Darlington Power Transistor
  • BDT60 - Silicon PNP Power Transistor
  • BDT60A - Silicon PNP Power Transistor
  • BDT60B - Silicon PNP Power Transistor
  • BDT60C - Silicon PNP Power Transistor
  • BDT64 - Silicon PNP Darlington Power Transistor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
Published: |