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BDT60 - Silicon PNP Power Transistor

General Description

DC Current Gain -hFE = 750(Min)@ IC= -1.5A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C Complement to Type BDT61/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable opera

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isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.