BDT60 Overview
·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.


