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BDT63C - Silicon NPN Darlington Power Transistor

This page provides the datasheet information for the BDT63C, a member of the BDT63 Silicon NPN Darlington Power Transistor family.

Datasheet Summary

Description

Collector Current -IC= 10A High DC Current Gain-hFE= 1000(Min)@ IC= 3A Complement to Type BDT62/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general purpose amplifier applications

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Datasheet preview – BDT63C

Datasheet Details

Part number BDT63C
Manufacturer Inchange Semiconductor
File Size 215.88 KB
Description Silicon NPN Darlington Power Transistor
Datasheet download datasheet BDT63C Datasheet
Additional preview pages of the BDT63C datasheet.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDT62/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63 60 VCER Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 BDT63 60 VCEO Collector-Emitter Voltage BDT63A 80 BDT63B 100 V BDT63C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
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