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BDT63F Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product.

General Description

·Collector Current -IC= 10A ·High DC Current Gain-hFE= 1000(Min)@ IC= 10A ·plement to Type BDT62F/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT63F 60 VCER Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 BDT63F 60 VCEO Collector-Emitter Voltage BDT63AF 80 BDT63BF 100 V BDT63CF 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.25 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.39 ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification BDT63F/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT63F V(BR)CEO Collector-Emitter Breakdown Voltage BDT63AF BDT63BF IC= 30mA ;IB=0 BDT63CF VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A;

IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A;

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