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BDX62 - Silicon PNP Darlington Power Transistor

Description

Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A -100 V BDX62B -120 BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A -80 V BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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