| Part Number | BDX62 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. ww.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX62/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX62 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX62A BDX6. |
BDX62 Datasheet and Specifications PDF
The BDX62 is a Silicon PNP Darlington Power Transistor.
| Part Number | BDX62 Datasheet |
|---|---|
| Description | PNP SILICON DARLINGTONS |
| Manufacturer | Comset Semiconductors |
| Overview | BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and sw. ss otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C Min -60 -80 -100 -120 - Typ - Max -0.5 Unit VCEO(SUS) ICEO Collector Cutof. |