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BDX62C - Silicon PNP Darlington Power Transistor

This page provides the datasheet information for the BDX62C, a member of the BDX62 Silicon PNP Darlington Power Transistor family.

Datasheet Summary

Description

Collector Current -IC= -8A High DC Current Gain-hFE= 1000(Min)@ IC= -3A Complement to Type BDX63/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applica

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Datasheet preview – BDX62C

Datasheet Details

Part number BDX62C
Manufacturer Inchange Semiconductor
File Size 210.92 KB
Description Silicon PNP Darlington Power Transistor
Datasheet download datasheet BDX62C Datasheet
Additional preview pages of the BDX62C datasheet.

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Full PDF Text Transcription

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX62 -80 VCBO Collector-Base Voltage BDX62A -100 V BDX62B -120 BDX62C -140 BDX62 -60 VCEO Collector-Emitter Voltage BDX62A -80 V BDX62B -100 BDX62C -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.
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