Collector Current -IC= 8A
High DC Current Gain-hFE= 1000(Min)@ IC= 3A
Complement to Type BDX62/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general amplifier
and switching applicat
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 1000(Min)@ IC= 3A ·Complement to Type BDX62/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX63
80
VCBO
Collector-Base Voltage
BDX63A
100
BDX63B
120
BDX63C
140
BDX63
60
VCEO
Collector-Emitter Voltage
BDX63A
80
BDX63B
100
BDX63C
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
8
ICM
Collector Current-Peak
12
IB
Base Current-Continuous
0.
BDX63 Datasheet
