Collector Current -IC= -8A
High DC Current Gain-hFE= 1000(Min)@ IC= -3A
Complement to Type BDX63/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio output stages and general amplifier
and switching applica
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX62
-80
VCBO
Collector-Base Voltage
BDX62A
-100
V
BDX62B
-120
BDX62C
-140
BDX62
-60
VCEO
Collector-Emitter Voltage
BDX62A
-80
V
BDX62B
-100
BDX62C
-120
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.
BDX62 Datasheet
