| Part Number | BDX62C Datasheet |
|---|---|
| Manufacturer | Seme LAB |
| Overview | BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. out notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semel. |
BDX62C Datasheet and Specifications PDF
The BDX62C is a Bipolar PNP Device.
| Part Number | BDX62C Datasheet |
|---|---|
| Description | Silicon PNP Darlington Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -8A ·High DC Current Gain-hFE= 1000(Min)@ IC= -3A ·Complement to Type BDX63/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. ww.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX62/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX62 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX62A BDX6. |
| Part Number | BDX62C Datasheet |
|---|---|
| Description | PNP SILICON DARLINGTONS |
| Manufacturer | Comset Semiconductors |
| Overview | BDX62 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX62, BDX62A, BDX62B and BDX62C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and sw. ss otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C Min -60 -80 -100 -120 - Typ - Max -0.5 Unit VCEO(SUS) ICEO Collector Cutof. |