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BDX64A - Silicon PNP Darlington Power Transistor

Download the BDX64A datasheet PDF. This datasheet also covers the BDX64 variant, as both devices belong to the same silicon pnp darlington power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Collector Current -IC= -12A High DC Current Gain-hFE= 1000(Min)@ IC= -5A Complement to Type BDX65/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applic

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Note: The manufacturer provides a single datasheet file (BDX64_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX64 -80 VCBO Collector-Base Voltage BDX64A BDX64B -100 -120 BDX64C -140 BDX64 -60 VCEO Collector-Emitter Voltage BDX64A BDX64B -80 -100 BDX64C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -12 ICM Collector Current-Peak -16 IB Base Current-Continuous -0.
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