| Part Number | BDX64A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= -12A ·High DC Current Gain-hFE= 1000(Min)@ IC= -5A ·Complement to Type BDX65/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX64/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX64 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX64A BDX64B IC= -50. |
BDX64A Datasheet and Specifications PDF
The BDX64A is a Silicon PNP Darlington Power Transistor.
| Part Number | BDX64A Datasheet |
|---|---|
| Description | Silicon PNP Darlington Power Transistor |
| Manufacturer | Comset Semiconductors |
| Overview | BDX64 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX64, BDX64A, BDX64B and BDX64C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and s. s otherwise noted Symbol Ratings Collector-Emitter Breakdown Voltage (*) Test Condition(s) IC=-0.1 A IB=0 L=25mH VCE=-30 V VCE=-40 V VCE=-50 V VCE=-60 V VBE=-5 V VCBO=-60 V VCBO=-40 V TCASE=200°C Min -60 -80 -100 -120 - Typ - Max -1.0 Unit VCEO(SUS) ICEO Collector Cutoff. |