| Part number | BDX64B |
|---|---|
| Download | BDX64B Datasheet (PDF) |
| File Size | 213.33 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Darlington Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDX64B | Bipolar PNP Device |
Comset Semiconductors |
BDX64B | Silicon PNP Darlington Power Transistor |
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Comset Semiconductors |
BDX64 | Silicon PNP Darlington Power Transistor |
|
Comset Semiconductors |
BDX64A | Silicon PNP Darlington Power Transistor |
|
Seme LAB |
BDX64C | Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX64/A/B/C TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. IB= -20mA -2 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -5A -1.8 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax;.
