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BDY24 - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for LF signal powe am

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isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.
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