The BDY58S by Inchange Semiconductor is a Silicon NPN Power Transistor. Below is the official datasheet preview.
| Part number | BDY58S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 BDY58S-InchangeSemiconductor.pdf
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Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Cu
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