Datasheet4U Logo Datasheet4U.com

BDY58S Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BDY58S General Description

*Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) *High Power Dissipation *Low Collector Saturation Voltage *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *LF signal power amplification. *High current fast switchin.

BDY58S Datasheet (207.21 KB)

Preview of BDY58S PDF

Datasheet Details

Part number:

BDY58S

Manufacturer:

Inchange Semiconductor

File Size:

207.21 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

BDY58 NPN Transistor (INCHANGE)

BDY58 SILICON POWER TRANSISTOR (SavantIC)

BDY58 NPN SILICON TRANSISTORS (Comset Semiconductors)

BDY58 HIGH CURRENT NPN SILICON TRANSISTOR (Seme LAB)

BDY58A Bipolar NPN Device (Seme LAB)

BDY58C Bipolar NPN Device (Seme LAB)

BDY58S Bipolar NPN Device (Seme LAB)

BDY53 Silicon NPN Power Transistor (Inchange Semiconductor)

BDY53 (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)

BDY54 Bipolar NPN Device (Seme LAB)

TAGS

BDY58S Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

BDY58S Datasheet Preview Page 2

BDY58S Distributor