Datasheet Details
| Part number | BDY58 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.05 KB |
| Description | NPN Transistor |
| Datasheet | BDY58-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY58 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.05 KB |
| Description | NPN Transistor |
| Datasheet | BDY58-INCHANGE.pdf |
|
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification.
·High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 25 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W BDY58 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY58 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY58 | SILICON POWER TRANSISTOR | SavantIC |
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BDY58 | NPN SILICON TRANSISTORS | Comset Semiconductors |
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BDY58 | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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BDY58A | Bipolar NPN Device | Seme LAB |
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BDY58C | Bipolar NPN Device | Seme LAB |
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