Datasheet Details
| Part number | BDY57 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 146.52 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDY57_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 ..
| Part number | BDY57 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 146.52 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDY57_SavantIC.pdf |
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·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER BDY57 Collector-base voltage BDY58 BDY57 VCEO VEBO IC IB PT Tj Tstg Collector-emitter voltage BDY58 Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 125 10 25 6 175 200 -65~200 V A A W Open emitter 160 80 V CONDITIONS VALUE 120 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDY57 IC=0.1A ;
IB=0 BDY58 BDY57 IC=5mA ;
IE=0 BDY58 VCEsat VBEsat ICBO ICER IEBO hFE-1 hFE-2 fT ton Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time IC=10A ;IB=1A IC=10A ;IB=1A VCB=100V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY57 | NPN Transistor | INCHANGE |
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BDY57 | Bipolar NPN Device | Seme LAB |
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BDY57 | NPN SILICON TRANSISTORS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| BDY55 | SILICON POWER TRANSISTOR |
| BDY56 | SILICON POWER TRANSISTOR |
| BDY58 | SILICON POWER TRANSISTOR |