BDY57 Description
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY57 Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.