BDY55X datasheet by Inchange Semiconductor.
| Part number | BDY55X |
|---|---|
| Datasheet | BDY55X-InchangeSemiconductor.pdf |
| File Size | 207.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY55X | Bipolar NPN Device | Seme LAB |
 |
BDY55 | SILICON POWER TRANSISTOR | SavantIC |
|
BDY55 | Bipolar NPN Device | Seme LAB |
 |
BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS | Comset Semiconductors |
 |
BDY55 | NPN Transistor | INCHANGE |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY53 | Silicon NPN Power Transistor |
| BDY54 | Silicon NPN Power Transistor |
| BDY58S | Silicon NPN Power Transistor |
| BDY13-6 | Silicon NPN Power Transistor |
| BDY20 | Silicon NPN Power Transistor |
| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
| BDY26C | Silicon NPN Power Transistor |
| BDY71 | Silicon NPN Power Transistor |
