| Part number | BDY55X |
|---|---|
| Download | BDY55X Datasheet (PDF) |
| File Size | 207.40 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDY55X | Bipolar NPN Device |
SavantIC |
BDY55 | SILICON POWER TRANSISTOR |
|
Seme LAB |
BDY55 | Bipolar NPN Device |
Comset Semiconductors |
BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS |
Inchange Semiconductor |
BDY55 | NPN Transistor |
·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;.
