Datasheet Details
| Part number | BDY55 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.29 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDY55_SavantIC.pdf |
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Overview: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 ..
| Part number | BDY55 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 137.29 KB |
| Description | SILICON POWER TRANSISTOR |
| Datasheet | BDY55_SavantIC.pdf |
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·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 60 7 15 7 117 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 CHARACTERISTICS ..
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY55 | Bipolar NPN Device | Seme LAB |
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BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS | Comset Semiconductors |
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BDY55 | NPN Transistor | INCHANGE |
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BDY55X | Bipolar NPN Device | Seme LAB |
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BDY55X | Silicon NPN Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| BDY56 | SILICON POWER TRANSISTOR |
| BDY57 | SILICON POWER TRANSISTOR |
| BDY58 | SILICON POWER TRANSISTOR |