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BDY58S - Silicon NPN Power Transistor

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Part number BDY58S
Manufacturer Inchange Semiconductor
File Size 207.21 KB
Description Silicon NPN Power Transistor
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Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Cu

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