Datasheet Details
| Part number | BDY58S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY58S-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | BDY58S |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.21 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | BDY58S-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification.
·High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 25 A IB Base Current-Continuous 6 A PC Collector Power Dissipation @TC=25℃ 175 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.0 ℃/W BDY58S isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY58S ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY58S | Bipolar NPN Device | Seme LAB |
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BDY58 | NPN Transistor | INCHANGE |
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BDY58 | SILICON POWER TRANSISTOR | SavantIC |
 |
BDY58 | NPN SILICON TRANSISTORS | Comset Semiconductors |
|
BDY58 | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
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