| Part number | BDY58S |
|---|---|
| Download | BDY58S Datasheet (PDF) |
| File Size | 207.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
BDY58S | Bipolar NPN Device |
Inchange Semiconductor |
BDY58 | NPN Transistor |
SavantIC |
BDY58 | SILICON POWER TRANSISTOR |
Comset Semiconductors |
BDY58 | NPN SILICON TRANSISTORS |
|
Seme LAB |
BDY58 | HIGH CURRENT NPN SILICON TRANSISTOR |
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY58S Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
