BDY58S datasheet by Inchange Semiconductor.
| Part number | BDY58S |
|---|---|
| Datasheet | BDY58S-InchangeSemiconductor.pdf |
| File Size | 207.21 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDY58S Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY58S | Bipolar NPN Device | Seme LAB |
 |
BDY58 | NPN Transistor | INCHANGE |
 |
BDY58 | SILICON POWER TRANSISTOR | SavantIC |
 |
BDY58 | NPN SILICON TRANSISTORS | Comset Semiconductors |
|
BDY58 | HIGH CURRENT NPN SILICON TRANSISTOR | Seme LAB |
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| BDY23 | Silicon NPN Power Transistor |
| BDY24 | Silicon NPN Power Transistor |
| BDY25B | Silicon NPN Power Transistor |
| BDY26C | Silicon NPN Power Transistor |
| BDY71 | Silicon NPN Power Transistor |
