Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-
: hFE=20-70@IC = 4A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general-purpose switching and amplifier...
