| Part number | BDY55 |
|---|---|
| Download | BDY55 Datasheet (PDF) |
| File Size | 203.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
SavantIC |
BDY55 | SILICON POWER TRANSISTOR |
Seme LAB |
BDY55 | Bipolar NPN Device |
Comset Semiconductors |
BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS |
|
Seme LAB |
BDY55X | Bipolar NPN Device |
Inchange Semiconductor |
BDY55X | Silicon NPN Power Transistor |
·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;.
