BDY55 datasheet by Inchange Semiconductor.
| Part number | BDY55 |
|---|---|
| Datasheet | BDY55-INCHANGE.pdf |
| File Size | 203.30 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDY55 | SILICON POWER TRANSISTOR | SavantIC |
 |
BDY55 | Bipolar NPN Device | Seme LAB |
 |
BDY55 | (BDY55 / BDY56) NPN SILICON TRANSISTORS | Comset Semiconductors |
|
BDY55X | Bipolar NPN Device | Seme LAB |
 |
BDY55X | Silicon NPN Power Transistor | Inchange Semiconductor |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY56 | NPN Transistor |
| BDY57 | NPN Transistor |
| BDY58 | NPN Transistor |
| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |
| BDY28 | NPN Transistor |
| BDY29 | NPN Transistor |
| BDY37 | NPN Transistor |
| BDY38 | NPN Transistor |
