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BDY56 - NPN Transistor

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Part number BDY56
Manufacturer INCHANGE
File Size 203.47 KB
Description NPN Transistor
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Description

Excellent Safe Operating Area DC Current Gain- : hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7

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