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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY56
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DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification.
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 120 7 15 7 117 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.
BDY56 Datasheet
