Datasheet Details
| Part number | BDY71 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.02 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 BDY71 Datasheet
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| Part number | BDY71 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.02 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
BDY71 Datasheet
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·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEX Collector-Emitter Voltage VBE= -1.5V 90 V VCER Collector-Emitter Voltage RBE= 100Ω 60 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 6.0 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor BDY71.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BDY71 | Bipolar NPN Device | Seme LAB |
|
BDY71X | Bipolar NPN Device | Seme LAB |
 |
BDY71X | SILICON PLANAR EPITAXIAL NPN TRANSISTOR | TT |
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