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Inchange Semiconductor

BU100 Datasheet Preview

BU100 Datasheet

Silicon NPN Power Transistors

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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BU100
DESCRIPTION
·With TO-3 package
·High voltage capability
APPLICATIONS
·For horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
PD Total power dissipation
TC=75
Tj Junction temperature
Tstg Storage temperature
VALUE
150
60
7
10
15
15
200
-55~200
UNIT
V
V
V
A
A
W
Datasheet pdf - http://www.DataSheet4U.net/




Inchange Semiconductor

BU100 Datasheet Preview

BU100 Datasheet

Silicon NPN Power Transistors

No Preview Available !

www.DataSheet.co.kr
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=8A ;IB=2.5A
VBE(sat) Base-emitter saturation voltage
IC=8A ;IB=2.5A
ICBO Collector cut-off current
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=2A ; VCE=2V
fT Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Product Specification
BU100
MIN TYP. MAX UNIT
60 V
150 V
7V
3.3 V
2.2 V
10 μA
10 μA
40 90
0.1 MHz
2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number BU100
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 3 Pages
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