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BU4525AX Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current- Continuous Collector Current-Peak IB Base Current- Continuous www.DataSheet4U.com B w ww s c s .i 800 V 7.5 V 12 A 30 A 8 A 12 A 45 W ℃ ℃ 150 n c .

i m e IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature PC TJ Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP.

Overview

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor.