BU4525AL Datasheet | NXP Semiconductors

DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time CONDITIONS VBE = 0 V TYP. 8.0 7.5 t.b.f t.b.f MAX. 1500 800 12 30 125 3.0 t.b.f t.b.f UNIT V V A A W V A A µs µs Tmb ≤ 25 ˚C IC = 9.0 A; IB = 2.25A f= 16 k Hz f= 70 k Hz ICsat = 9.0 A; f = 16 k Hz ICsat = 7.5 A; f = 70 k Hz PINNING - SOT430 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 2 3 heat collector sink e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 7 125 150 150 UNIT V V A A A A A W ˚C ˚C Tmb ≤ 25 ˚C 1 Turn-off current. January 1998 Rev 1.000 Philips Semiconductors Objective specification Silicon Diffused Power Transistor THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO BVEBO VCEOsust VCEsat VBEsat h FE h FE PARAMETER Collector cut-off...