Datasheet Details
| Part number | BU608D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.11 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU608D Download (PDF) |
|
|
Overview: isc Silicon NPN Power Transistor.
| Part number | BU608D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.11 KB |
| Description | Silicon NPN Power Transistor |
| Download | BU608D Download (PDF) |
|
|
|
·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BU608D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU608D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BU608 | NPN Transistor | INCHANGE |
 |
BU608 | SILICON POWER TRANSISTOR | SavantIC |
 |
BU6084B | Bipolar Junction Transistor | Jingdao |
|
BU6084BF | Bipolar Junction Transistor | Jingdao |
| Part Number | Description |
|---|---|
| BU606 | Silicon NPN Power Transistor |
| BU607 | Silicon NPN Power Transistor |
| BU607D | Silicon NPN Power Transistor |